Micron 2933 - Инструкция по эксплуатации - Страница 8

Table 5: Pin Descriptions (Continued)

Symbol

Type

Description

TDQS_t

TDQS_c

(x8 DRAM-based

RDIMM only)

Output

Termination data strobe:

 When enabled via the mode register, the DRAM device enables the

same R

TT

 termination resistance on TDQS_t and TDQS_c that is applied to DQS_t and DQS_c.

When the TDQS function is disabled via the mode register, the DM/TDQS_t pin provides the da-
ta mask (DM) function, and the TDQS_c pin is not used. The TDQS function must be disabled in
the mode register for both the x4 and x16 configurations. The DM function is supported only in
x8 and x16 configurations. DM, DBI, and TDQS are a shared pin and are enabled/disabled by
mode register settings. For more information about TDQS, see the DDR4 DRAM component da-
ta sheet (TDQS_t and TDQS_c are not valid for UDIMMs).

V

DD

Supply

Module power supply:

 1.2V (TYP).

V

PP

Supply

DRAM activating power supply:

 2.5V –0.125V/+0.250V.

V

REFCA

Supply

Reference voltage for control, command, and address pins.

V

SS

Supply

Ground.

V

TT

Supply

Power supply for termination of address, command, and control V

DD

/2.

V

DDSPD

Supply

Power supply used to power the I

2

C bus for SPD.

RFU

–

Reserved for future use.

NC

–

No connect:

 No internal electrical connection is present.

NF

–

No function:

 May have internal connection present, but has no function.

16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM

Pin Descriptions

CCMTD-1725822587-9899
asf18c2gx72pdz.pdf - Rev. H 7/19 EN

8

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