Micron 2933 - Инструкция по эксплуатации - Страница 24

Table 18: DDR4 I

DD

 Specifications and Conditions (0° 

≤

 T

C

≤

 85°) – 16GB (Die Revision J)

Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig × 8) compo-
nent data sheet.

Parameter

Symbol

3200

2933

2666

Units

One bank ACTIVATE-PRECHARGE current

I

DD0

1

594

585

567

mA

One bank ACTIVATE-PRECHARGE, wordline boost, I

PP

 current

I

PP0

1

54

54

54

mA

One bank ACTIVATE-READ-PRECHARGE current

I

DD1

1

738

720

702

mA

Precharge standby current

I

DD2N

2

558

540

540

mA

Precharge standby ODT current

I

DD2NT

1

576

558

540

mA

Precharge power-down current

I

DD2P

2

396

396

396

mA

Precharge quite standby current

I

DD2Q

2

468

468

468

mA

Active standby current

I

DD3N

2

774

738

702

mA

Active standby I

PP

 current

I

PP3N

2

54

54

54

mA

Active power-down current

I

DD3P

2

594

576

558

mA

Burst read current

I

DD4R

1

1719

1620

1530

mA

Burst write current

I

DD4W

1

1476

1404

1323

mA

Burst refresh current (1x REF)

I

DD5R

1

621

612

603

mA

Burst refresh I

PP

 current (1x REF)

I

PP5R

1

72

72

72

mA

Self refresh current: Normal temperature range (0°C to 85°C)

I

DD6N

2

576

576

576

mA

Self refresh current: Extended temperature range (0°C to 95°C)

I

DD6E

2

990

990

990

mA

Self refresh current: Reduced temperature range (0°C to 45°C)

I

DD6R

2

360

360

360

mA

Auto self refresh current (25°C)

I

DD6A

2

147.6

147.6

147.6

mA

Auto self refresh current (45°C)

I

DD6A

2

360

360

360

mA

Auto self refresh current (75°C)

I

DD6A

2

540

540

540

mA

Auto self refresh current (95°C)

I

DD6A

2

990

990

990

mA

Auto self refresh I

PP

 current

I

PP6X

2

90

90

90

mA

Bank interleave read current

I

DD7

1

1818

1773

1737

mA

Bank interleave read I

PP

 current

I

PP7

1

144

117

117

mA

Maximum power-down current

I

DD8

2

324

324

324

mA

Notes: 1. One module rank in the active I

DD/PP

, the other rank in I

DD2P/PP3N

.

2. All ranks in this I

DD/PP

 condition.

3. When T

C

 > 85°C, the I

DD

 and I

PP

 values must be derated. Refer to the base device data

sheet I

DD

 and I

PP

 specification tables for derating values for the applicable die-revision.

16GB (x72, ECC, DR) 288-Pin DDR4 RDIMM

I

DD

 Specifications

CCMTD-1725822587-9899
asf18c2gx72pdz.pdf - Rev. H 7/19 EN

24

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